HIGH POWER SWITCHING USE INSULATED TYPE

HIGH POWER SWITCHING USE INSULATED TYPE Collector current IC .............….......................… 5 0 A Collector-emitter voltage VCES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ● Flat base Type ● Copper base plate ● Tin plating pin ter

文件：486.09 Kbytes 页数：14 Pages

Mitsubishi

三菱电机

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

文件：49.23 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Six-IGBT IGBTMOD 50 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

文件：59.25 Kbytes 页数：4 Pages

POWEREX

Six-IGBT IGBTMOD 50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

文件：67.46 Kbytes 页数：4 Pages

POWEREX

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

文件：57.28 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

MEDIUM POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the

文件：57.3 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Six-IGBT IGBTMOD 50 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

文件：67.37 Kbytes 页数：4 Pages

POWEREX

Trench Gate Design Six IGBTMOD??50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isol

文件：100.59 Kbytes 页数：4 Pages

POWEREX

Trench Gate Design Six IGBTMOD??50 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isola

文件：127.46 Kbytes 页数：4 Pages

POWEREX

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ..................................................................... 50A ● VCES ......................................................... 1200V ● Insulated Type ● 6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

文件：81.53 Kbytes 页数：4 Pages

Mitsubishi

三菱电机