Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：57.25 Kbytes 页数：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

文件：43.41 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

文件：47.4 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Single IGBTMOD 400 Amperes/1400 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：57.28 Kbytes 页数：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast-recovery free-wheel diode. All components and interconnects are isolated from the heat sinking base plate, offering s

文件：48.71 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

Single IGBTMOD 400 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：57.94 Kbytes 页数：4 Pages

POWEREX

Single IGBTMOD??HVIGBT 400 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

文件：65.239 Kbytes 页数：4 Pages

POWEREX

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating

文件：63.1 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 3300V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliabi

文件：62.77 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

文件：68.77 Kbytes 页数：4 Pages

MITSUBISHI

三菱电机