Single IGBTMOD 400 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：57.94 Kbytes 页数：4 Pages

POWEREX

Single IGBTMOD??HVIGBT 400 Amperes/4500 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified syste

文件：65.239 Kbytes 页数：4 Pages

POWEREX

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 4500V ● Insulated Type ● 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating

文件：63.1 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE INSULATED TYPE ● IC...................................................................400A ● VCES ....................................................... 3300V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliabi

文件：62.77 Kbytes 页数：7 Pages

Mitsubishi

三菱电机

HIGH POWER SWITCHING USE

HIGH POWER SWITCHING USE ● IC ...................................................................400A ● VCES ......................................................... 1200V ● Insulated Type ● 1-elements in a pack APPLICATION General purpose inverters & Servo controls, etc

文件：68.77 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

Trench Gate Design Single IGBTMOD??400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：101.12 Kbytes 页数：4 Pages

POWEREX

Single IGBTMOD 400 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from the heat sinking baseplate,

文件：56.69 Kbytes 页数：4 Pages

POWEREX

HIGH POWER SWITCHING USE INSULATED TYPE

Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering si

文件：44.56 Kbytes 页数：4 Pages

Mitsubishi

三菱电机

N-Channel Enhancement Mode MOSFET

Features · 40V/60A, RDS(ON)= 4.6mW (max.) @ VGS=10V RDS(ON)= 5.9mW (max.) @ VGS=4.5V · Reliable and Rugged · Lead Free and Green DevicesAvailable (RoHSCompliant) Applications · SMPS Synchronous Rectification · Load Switch · DC-DC Conversion

文件：299.19 Kbytes 页数：12 Pages

SINOPWER

大中集成电路

Telephone Slide,Miniature Bayonet Base

T-2 Telephone Slide Base - Type 3 T-2 Miniature Bayonet Base

文件：27.15 Kbytes 页数：1 Pages

VCC

Visual Communications Company