SGT MOSFET

AppliedPower

应能微

P-Channel Enhancement MOSFET

Features • VDS=-100V, ID=-20A • RDS(ON)=86mΩ@VGS=-10V(Typ.) • RDS(ON)=90mΩ@VGS=-4.5V(Typ.) • High Power and current handing capability • Lead free product is acquired • Surface Mount Package Main Applications • Battery Protection • Load Switch • Power Management

文件：285.42 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

P-Channel Enhancement Mode Power MOSFET

Description The G20P10KE uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：654.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

P-Channel Enhancement Mode Field Effect Transistor

文件：396.54 Kbytes 页数：4 Pages

MCC