HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)

VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes MECHANICAL DATA

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PANJIT

強茂

HIGH CURRENT SILICON BRIDGE RECTIFIERS

FEATURES ● Electrically Isolated Metal Case for Maximum Heat Dissipation ● Surge Overload Ratings to 400 Amperes ● These bridges are on the U/L Recognized Products List for currents of 10, 25 and 35 amperes

文件：160.12 Kbytes 页数：2 Pages

TRSYS

Transys Electronics

Four IGBTMOD 100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of four IGBT Transistors in an H-Bridge configuration, with each transistor having a reverse-connected super-fast recovery freewheel diode. All components and interconnects are isolated from

文件：72.12 Kbytes 页数：4 Pages

POWEREX

Camaster HRC Fuse Holders 30, 60, and 100 Amps; 600V A.C.

• Range: 30 (miniature), 30, 60, and 100 Amps at 600V a.c. • A range of fully shrouded HRC Fuse Holders having an advanced design. • They incorporate a high level of innovation, with enhanced performance characteristics and comply with the requirements of: CSA C22.2 No. 39 as well as IEC 269

文件：81.72 Kbytes 页数：3 Pages

COOPER

Trench Gate Design Dual IGBTMOD??100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：115.58 Kbytes 页数：4 Pages

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Dual IGBTMOD 100 Amperes/600 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：58.07 Kbytes 页数：4 Pages

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Trench Gate Design Dual IGBTMOD??100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：104.76 Kbytes 页数：4 Pages

POWEREX

Dual IGBTMOD 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：517.53 Kbytes 页数：4 Pages

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Dual IGBTMOD NFH-Series Module 100 Amperes/1200 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in high frequency applications; 30 kHz for hard switching applications and 60 to 70 kHz for soft switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconn

文件：628.23 Kbytes 页数：4 Pages

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Dual IGBTMOD 100 Amperes/1700 Volts

Description: Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from

文件：452.25 Kbytes 页数：4 Pages

POWEREX