丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107；Package：SOIC；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107B；Package：SO；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107B；Package：SO；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器

丝印：CM0107B；Package：TSSOP；CMOS Dual 2-Input NAND Buffer/Driver

Features: 32 times standard B-Series output current drive sinking capability — 136 mA typ. Vpp=10V,Vps=1V 100% tested for quiescent current at 20 V. Maximum input current of 1 uA at 18 over full package-temperature range; 100 nA at 18 V and 25°C 5-V, 10-V, and 15-V parametric ratin

文件：1.1513 Mbytes 页数：21 Pages

TI

德州仪器