N沟道Trench-MOS系列

JDsemi

深圳晶导

MOSFET - Power, Single, N-Channel 30 V, 98 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：344.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single, N-Channel 30 V, 98 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：344.34 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

4V Drive Nch MOS FET

文件：64.45 Kbytes 页数：3 Pages

ROHM

罗姆