分立式 MOSFET

1200 V, 1.3 mΩ, HM, Common-Source Industrial qualified, SiC Power Module with Pre-Applied Thermal Interface Material (TIM)

Wolfspeed(CREE)

1200 V, 800 A, Silicon Carbide, Common-Source Module

Technical Features • Low Inductance, Low Profile 62 mm Footprint • High Junction Temperature (175 °C) Operation • Implements Gen 3+ SiC MOSFET Technology with Improved Conduction Loss • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator Typical Applications • Solid

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WOLFSPEED

NS

上传：深圳市昊希电子有限公司

QFP64

NS

上传：深圳市富芯乐电子科技有限公司

SOP-8

EXAR

艾科嘉

上传：深圳市天地昆电子有限公司