1700 V, 650 A, Silicon Carbide, Common-Source Module

Technical Features • Low Inductance, Low Profile 62 mm Footprint • High Junction Temperature (175 °C) Operation • Implements Third Generation SiC MOSFET Technology • Light Weight AlSiC Baseplate • High Reliability Silicon Nitride Insulator Typical Applications • Solid State Circuit Break

文件：1.09594 Mbytes 页数：10 Pages

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分立式 MOSFET

1700 V, 1.42 mΩ, HM, Common-Source Industrial qualified, SiC Power Module

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分立式 MOSFET

1700 V, 1.42 mΩ, HM, Common-Source Industrial qualified, SiC Power Module with Pre-Applied Thermal Interface Material (TIM)

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1700 V, 650 A, Silicon Carbide, Half-Bridge Module

Technical Features • Ultra-Low Loss • High Frequency Operation • Zero Turn-Off Tail Current from MOSFET • Normally-Off, Fail-Safe Device Operation Applications • Railway, Traction, and Motor Drives • EV Chargers • High-Efficiency Converters / Inverters • Renewable Energy • Smart-Grid / G

文件：1.9045 Mbytes 页数：12 Pages

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