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BF505	文件：36.66 Kbytes Page：2 Pages	NPNSILICONRFTRANSISTOR NPNSiliconRFTransistor BF505isanNPNsiliconplanarRFtransistorinTO92plasticpackage(10A3DIN41868). ThetransistorisparticularlyintendedforuseinVHFamplifiersincommonemitterconfiguration,VHFmixersandVHF/UHFoscillators.	SIEMENS Siemens Ltd	SIEMENS
BFC505	文件：82.39 Kbytes Page：11 Pages	NPNwidebandcascodetransistor DESCRIPTION Cascodeamplifierwithtwodiscretediesinasurfacemount,5-pinSOT353(S-mini)package.TheamplifierisprimarilyintendedforlowpowerRFcommunicationsequipment,suchaspagersandhasaverylowfeedbackcapacitanceresultinginhighisolation. FEATURES •Smallsize •Hig	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFE505	文件：59.19 Kbytes Page：8 Pages	NPNwidebanddifferentialtransistor DESCRIPTION EmittercoupleddualNPNsiliconRFtransistorinasurfacemount,5-pinSOT353(S-mini)package.ThetransistorisprimarilyintendedforapplicationsintheRFfrontendasabalancedmixer,adifferentialamplifierinanaloganddigitalcellularphones,andincordlessphones,page	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505	文件：136.27 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司	JMNIC
BFG505/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505/X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：306.4 Kbytes Page：13 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505/X	文件：159.22 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT143Bplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W/X	文件：148.94 Kbytes Page：16 Pages	NPN9GHzwidebandtransistors DESCRIPTION NPNsiliconplanarepitaxialtransistorina4-pindual-emitterSOT343Nplasticpackage. FEATURES •Highpowergain •Lownoisefigure •Hightransitionfrequency •Goldmetallizationensuresexcellentreliability. APPLICATIONS RFfrontendapplicationsintheGHzrange,su	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFG505W-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505W-XR	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFG505-X	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：9.37507 Mbytes Page：130 Pages	RFManual16thedition Generaldescription 10WplasticLDMOSpowertransistorforbasestationapplicationsatfrequenciesfrom700MHzto2700MHz. Featuresandbenefits ■Highefficiency ■Excellentruggedness ■Designedforbroadbandoperation ■Excellentthermalstability ■Highpowergain ■IntegratedESDp	nxpNXP Semiconductors 恩智浦恩智浦半导体公司	nxp
BFM505	文件：92.89 Kbytes Page：10 Pages	DualNPNwidebandtransistor DESCRIPTION DualtransistorwithtwosiliconNPNRFdiesinasurfacemount,6-pinSOT363(S-mini)package.ThetransistorsareprimarilyintendedforwidebandapplicationsintheGHz-rangeintheRFfrontendofanaloganddigitalcellularphones,cordlessphones,radardetectors,pagersandsat	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips
BFR505	文件：120.89 Kbytes Page：12 Pages	NPN9GHzwidebandtransistor DESCRIPTION TheBFR505isannpnsiliconplanarepitaxialtransistor,intendedforapplicationsintheRFfrontendinwidebandapplicationsintheGHzrange,suchasanaloganddigitalcellulartelephones,cordlesstelephones(CT1,CT2,DECT,etc.),radardetectors,pagersandsatelliteTVtuners	PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦	Philips

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市航润创能电子集团有限公司	CL-505S-RGW-SD-T	CITIZEN	21+	LED	24900	原装现货假一赔十	询价
深圳市惊羽科技有限公司	CL-505S-RGW-SD-T	CITIZEN-西铁城	24+25+/26+27+	车规-LED光电	26800	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
深圳市科雨电子有限公司	CL-505S-X-SD-T	CITIZEN	20+	光电元件	9136	就找我吧!--邀您体验愉快问购元件!	询价
深圳市易讯博科技有限公司	CL-505S-X-SD-T	Citizen	22+	NA	33029	加我QQ或微信咨询更多详细信息,	询价
北京京北通宇电子元件有限公司	CL5074-000	TE	23+	NA	50	射频连接器	询价
深圳市创新迹电子有限公司	CL-50D-CD	CITIZEN	22+	SMD	25000	只有原装原装,支持BOM配单	询价
中天科工半导体（深圳）有限公司	CL-50G-CD	CITIZENELECTRONICS	20+	LED	83000	LED原装优势主营型号-可开原型号增税票	询价
上海市鑫鸿达电子	CL50GRXAPQ	Banner Engineering	2022+		1	全新原装货期两周	询价
北京天阳诚业科贸有限公司	CL50GRYPQ	BANNER ENGINEERING	21341+	con	9	现货常备产品原装可到京北通宇商城查价格	询价
深圳市蓝山航业科技有限公司	CL50RCD	citizen	22+		500000	行业低价,代理渠道	询价

更多CL-505S-RGW-SD-T供应商更新时间2024-5-31 17:24:00

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