丝印：CKW；Package：SC70；ULTRA LOW-POWER, 10 mA, LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree(1) · 10 mA Low-Dropo

文件：972.76 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CKW；Package：SC70；ULTRA LOW-POWER, 10 mA, LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree(1) · 10 mA Low-Dropo

文件：972.76 Kbytes 页数：17 Pages

TI

德州仪器

丝印：CKW；Package：SC70；ULTRA LOW-POWER, 10 mA, LDO LINEAR REGULATORS WITH POWER GOOD OUTPUT

1FEATURES · Controlled Baseline – One Assembly Site – One Test Site – One Fabrication Site · Extended Temperature Performance of –55°C to 125°C · Enhanced Diminishing Manufacturing Sources (DMS) Support · Enhanced Product-Change Notification · Qualification Pedigree(1) · 10 mA Low-Dropo

文件：972.76 Kbytes 页数：17 Pages

TI

德州仪器

IGBT（Insulated Gate Bipolar Transistor）

IGBT（Insulated Gate Bipolar Transistor，简写IGBT）功率器件与VDMOS的差别在于n外延层下面不是n+层而是p+层。导通时在n型漂移去产生电导调制效应，大幅降低导通压降。\r\n\r\nCoolSemi的IGBT功率器件采用沟槽栅场截至设计，外延层厚度降低到60um，Vcesat达到1.45V，性能媲美Infineon IFX6。

CoolSemi

功成半导体

IGBT

CoolSemi

功成半导体

IGBT

CoolSemi

功成半导体