零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
N-CHANNELENHANCEMENT-MODESURFACEMOUNTMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTORCMPDM7002AandCMPDM7002AGarespecialversionsofthe2N7002enhancement-modeN-ChannelMOSFETmanufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.ThesespecialdevicesofferlowrDS(ON)andlowVDS | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTN-CHANNELENHANCEMENT-MODESILICONMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTSILICONN-CHANNELENHANCEMENT-MODEMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
60V,300mAN-ChannelMOSFETinSOT-23package CentralSemiconductor’sCMPDM7002AEisaspecialESDprotectedversionofthe2N7002enhancement-modeN-channelMOSFETdesignedforhighspeedpulsedamplifieranddriverapplications. Features: •ESDprotectionupto1800V •350mWpowerdissipation •Lowgatecharge •LowrDS(ON) Applicatio | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTN-CHANNELENHANCEMENT-MODESILICONMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTSILICONN-CHANNELENHANCEMENT-MODEMOSFET | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
SURFACEMOUNTN-CHANNELENHANCEMENT-MODESILICONMOSFET CentralSemiconductor’sCMPDM7002AHCisanN-ChannelEnhancement-modeMOSFETthatoptimizeshighcurrentcapabilityandenergyefficiencyintheindustrystandardSOT-23package.Thecombinationofhighcurrentcapability,lowgatechargeandlowon-resistancemakesthisdevicetheidealselection | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
60V,1.0AHighCurrentN-ChannelMOSFETinSOT-23package | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
DUALN-CHANNELENHANCEMENT-MODESURFACEMOUNTMOSFET DESCRIPTION: TheCENTRALSEMICONDUCTORCMXDM7002Aisspecialdualversionofthe2N7002Enhancement-modeN-ChannelFieldEffectTransistor,manufacturedbytheN-ChannelDMOSProcess,designedforhighspeedpulsedamplifieranddriverapplications.ThisspecialDualTransistordeviceofferslow | CentralCentral Semiconductor Corp 美国中央半导体 | Central | ||
CombinerWorkstation | LIGHTEL Lightel Technologies INC. | LIGHTEL |
技术参数
- Process:
Trench
- ESDYes/No:
Yes
- VDSV:
60
- VGSV:
±20
- IDA:
0.41
- VGS(TH)V:
1.3~2.3
- RDS(mΩ)@VGS10V Typ:
1200
- RDS(mΩ)@VGS10V Max:
1500
- RDS(mΩ)@VGS4.5V Typ:
1300
- RDS(mΩ)@VGS4.5V Max:
1800
- Package:
DFN1006-3L
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CJ(江苏长电/长晶) |
2447 |
DFN1006-3L |
105000 |
10000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
CJ(江苏长电/长晶) |
20+ |
DFN-3L(1x0.6) |
10000 |
询价 | |||
长晶 |
2023 |
DFN1006-3L |
40000 |
询价 | |||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
NK/南科功率 |
2025+ |
DFN1006-3L |
986966 |
国产 |
询价 | ||
CJ/长晶 |
2511 |
DFN1006-3L |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
TECH PUBLIC(台舟) |
23+ |
DFN-3L(1x0.6) |
10000 |
三极管/MOS管/晶体管 > 场效应管(MOSFET) |
询价 | ||
CJ/长晶 |
20+ |
PDFNWB3.33.3-8L-B |
120000 |
只做原装 可免费提供样品 |
询价 | ||
长晶科技 |
21+ |
PDFNWB3.3*3.3-B |
30 |
全新原装鄙视假货 |
询价 | ||
CJ/长电 |
24+ |
PDFNWB3.3*3.3-8L-B |
50000 |
只做原装,欢迎询价,量大价优 |
询价 |
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