Dual Enhancement Mode Field Effect Transistor

N-channel: VOLTAGE 30 Volts CURRENT 7 Ampere P-channel: VOLTAGE 30 Volts CURRENT 6 Ampere FEATURE ​​​​​​​* Small flat package. (SO-8 ) * Super high dense cell design for extremely low RDS(ON). * Lead free product is acquired. * High power and current handing capability. APPLICATION * Servo

文件：320.42 Kbytes 页数：3 Pages

CHENMKO

力勤

Dual Enhancement Mode Field Effect Transistor

Chenmko

力勤

Miniature Circular Connectors

文件：15.09519 Mbytes 页数：40 Pages

HOSIDEN

Advanced PMU for Marvell Aspen

文件：1.00863 Mbytes 页数：46 Pages

ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司

Advanced PMU for Marvell Aspen

文件：91.74 Kbytes 页数：2 Pages

ACTIVE-SEMIActive-Semi, Inc

技领半导体技领半导体（上海）有限公司

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 30V, 7A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 38mΩ @VGS = 4.5V. ■ -30V, -6A, RDS(ON) = 38mΩ @VGS = -10V. RDS(ON) = 57mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

文件：176.94 Kbytes 页数：7 Pages

CET

华瑞