X6 Series IP67 Electrical Knockout Enclosure - Polycarbonate

Product ove r v i ew • Screw type lid with knockouts on the base • Moulded in high quality polycarbonate • Pillars in the base can be used for PCB mounting or DIN rail mounting, etc. • Gasket moulded into the enclosure lid • Clear lid option available • Captive, polyamide lid screws include

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CAMDENBOSS

X7 series electrical heavy duty enclosures-polycarbonate

Product ove r v i ew • Heavy duty screw type enclosure • Moulded in high quality polycarbonate • Pillars in the base can be used for PCB mounting or DIN rail mounting, etc. • Gasket moulded into the enclosure lid • Clear lid option available • Captive, polyamide lid screws included • Wall

文件：723.06 Kbytes 页数：6 Pages

CAMDENBOSS

X8 Series Waterproof Hinged Door Enclosure - Polycarbonate

Product ove r v i ew • Heavy duty hinge lid and latch enclosure • Moulded in high quality polycarbonate • Pillars in the base can be used for PCB mounting or DIN rail mounting, etc. • Brass inserts in the base • Gasket moulded into the enclosure lid • Clear lid option available • Wall mou

文件：769.7 Kbytes 页数：6 Pages

CAMDENBOSS

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

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NTE

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

文件：50.06 Kbytes 页数：6 Pages

NEC

瑞萨