NPN Digital Silicon Transistor

VOLTAGE 20 Volts CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SOT-23) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. * These transistors can be used at high current levels,

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NPN Digital Silicon Transistor

VOLTAGE 20 Volts CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. * These transistors can be used at high current

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NPN Digital Silicon Transistor

VOLTAGE 20 Volts CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SOT-23) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. * These transistors can be used at high current levels,

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NPN Digital Silicon Transistor

VOLTAGE 20 Volts CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. * These transistors can be used at high current

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NPN Digital Silicon Transistor

VOLTAGE 20 Volts CURRENT 600 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * In addition to the features of regular digital transistor. VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors ideal for muting circuits. * These transistors can be used at high current

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NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bi

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NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bi

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NPN Digital Silicon Transistor

FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bias resistor(R1=10kΩ, Typ. ) APPLICATI

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NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT-346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bi

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NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-59/SOT346) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bia

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