NPN Digital Silicon Transistor

VOLTAGE 50 Volts CURRENT 500 mAmpere FEATURE * Small surface mounting type. (SC-70/SOT-323) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capability. * Internal isolated NPN transistors in one package. * Built in bi

文件：170.61 Kbytes 页数：3 Pages

CHENMKO

力勤

NPN Digital Silicon Transistor

Chenmko

力勤

Reference Diode

文件：126.55 Kbytes 页数：4 Pages

NSC

国半

Reference Diode

文件：126.55 Kbytes 页数：4 Pages

NSC

国半

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

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MOTOROLA

摩托罗拉