17-27GHz High Power Amplifier

Description The CHA5056 is three-stage monolithic high power amplifier. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes through the substrate. It is supplied in c

文件：273.28 Kbytes 页数：8 Pages

UMS

17-27GHz High Power Amplifier

Description The CHA5056-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes through the substrate. It is supplied in RoHS compliant SMD package Main Features ■ Broadband performance 17-27GHz

文件：1.30765 Mbytes 页数：12 Pages

UMS

17-27GHz High Power Amplifier

Description\nThe CHA5056-QGG is a three-stage monolithic high power amplifier.\nThe circuit is manufactured with a power PHEMT process, 0.15µm gate length, via holes through the substrate.\nIt is supplied in RoHS compliant SMD packageMain ■ Broadband performance 17-27GHz\n■ 28.5dBm Output Power @1dB compression\n■ 38dBm 3rd order intercept point\n■ High gain: 19dB\n■ ESD protected (see page 6)\n■ DC power consumption, 890mA @ 4.5V\n■ 28LQFN5x5 ;

UMS

CMOS 4-BIT 1 CHIP MICROCOMPUTER

CMOS 4-bit 1 Chip Microcomputer

文件：301.16 Kbytes 页数：12 Pages

SONYSony Corporation

索尼

DRV5056 Unipolar Ratiometric Linear Hall Effect Sensor

文件：1.51967 Mbytes 页数：35 Pages

TI

德州仪器

Unipolar Ratiometric Linear Hall Effect Sensor

文件：1.25478 Mbytes 页数：32 Pages

TI

德州仪器