7-16GHz High Power Amplifier

Description The CHA5052 is a three-stage monolithic high power amplifier. The backside of the chip is both RF and DC grounds. This helps to simplify the assembly process. The circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through t

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7-16GHz High Power Amplifier

Description\nThe  CHA5052  is  a  three-stage   monolithic  high power amplifier.\nThe  backside  of  the  chip  is  both  RF  and  DC grounds.  This  helps  to  simplify  the  assembly process.\nThe circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through the subst ■Broadband performance 7-16GHz\n■High gain: 21dB\n■ESD protections (see page 10)\n■29dBm Output Power @ 1dB compression\n■Typical 37dBm 3rd order intercept point\n■DC power consumption, 700mA @ 5V;

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7-16GHz High Power Amplifier

Description The CHA5052-QGG is a three-stage monolithic high power amplifier. The circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through the substrate. It is supppplied in RoHS compliant SMD package. Main Features ■Frequency range 7-16GHz ■

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7-16GHz High Power Amplifier

Description\nThe CHA5052-QGG is a three-stage monolithic high power amplifier.\nThe circuit is manufactured with a power P-HEMT process, 0.15µm gate length, via holes through the substrate.\nIt is supppplied in RoHS compliant SMD package.\n\nMain ■Frequency range 7-16GHz\n■Gain: 19dB\n■37dBm 3rd order intercept point\n■29dBm Output Power @1dB compression\n■ESD protected (see page 7)\n■DC power consumption, 700mA @ 5V\n■28LQFN5x5 ;

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