1-18 GHz WIDE BAND AMPLIFIER

Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. Main Featur

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1-18 GHz WIDE BAND AMPLIFIER

文件：231.2 Kbytes 页数：8 Pages

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1-18 GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC

Description\nThe CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes\nthrough the substrate and air bridges and it is available in die form.Main ■ Broadband performances : 1-18 GHz\n■14dB gain\n■3dB typical Low Noise Figure\n■ ±0.7 dB gain flatness\n■Die size : 2.15 X 1.42 X 0.10 mm;

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1-18 GHz WIDE BAND AMPLIFIER

Description The CHA3023 is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a PHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. Main Featur

文件：389.63 Kbytes 页数：8 Pages

UMS

1-18 GHz WIDE BAND AMPLIFIER

文件：231.2 Kbytes 页数：8 Pages

UMS

1-18 GHz WIDE BAND AMPLIFIER

 \n The CHA3023-99F is a travelling wave amplifier using cascode FET.\n It is designed for a wide range of applications.\n The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form.\n  

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