Small Schottky Diodes

Chenmko

力勤

PNP SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 10A Peak Pulse Current * Excellent HFE Characteristics up to 10 Amps * Extremely Low Saturation Voltage E.g. 12mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 77mΩ at 3A

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Common Anode Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Feat

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ONSEMI

安森美半导体

DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL PNP MEDIUM POWER HIGH GAIN TRANSISTORS

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