SiliconCarbideSchottkyDiode

碳化硅肖特基二极管TO220-2 VR=650V IO=24A •Zero Reverse Recovery Current\r\n•Zero Forward Recovery Voltage\r\n•Positive Temperature Coefficient on V\r\n•Temperature-independent Switching\r\n•175'C Operating Junction Temperature\r;

HOEN

宏盈

Silicon Carbide Schottky Diode E-Series Automotive

文件：2.77938 Mbytes 页数：6 Pages

Cree

科锐

Silicon Carbide Schottky Diode E-Series Automotive

Features • 650V Schottky Rectifier • Zero Reverse Recovery Current • Zero Forward Recovery Voltage • High-Frequency Operation • Temperature-Independent Switching Behavior • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Higher System Level Efficiency • Incre

文件：2.77851 Mbytes 页数：6 Pages

WOLFSPEED

Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior Benefits • Higher System Efficiency • Parallel Device Convenience without thermal runaway • Higher Temp

文件：1.30779 Mbytes 页数：4 Pages

LUGUANG

鲁光电子