Standard Cavity Bandpass Filter

文件：238.92 Kbytes 页数：2 Pages

MTRONPTI

丝印：CH；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package Large Current Capacity

文件：1.44196 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：CH；Package：TSSOP5；2-input EXCLUSIVE-OR gate

1. General description The 74AHC1G86; 74AHCT1G86 is a single 2-input EXCLUSIVE-OR gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. 2. Features • Wide supply voltage range from 2.0 to 5.5 V • Overvoltage tolerant

文件：211.39 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CH；Package：TSSOP5；2-input EXCLUSIVE-OR gate

1. General description The 74AHC1G86-Q100; 74AHCT1G86-Q100 is a single 2-input EXCLUSIVE-OR gate. Inputs are overvoltage tolerant. This feature allows the use of these devices as translators in mixed voltage environments. This product has been qualified to the Automotive Electronics Council (A

文件：210.64 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CH；Package：CSP-4；HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR

Features · Low Dropout Voltage at IOUT=100mA: 150mV Typical (Except 1.2V, 1.3V and 1.5V Versions) · Low Standby Current: 0.1μA Typical · Low Quiescent Current: 25μA Typical · High Ripple Rejection: 70dB Typical （f=1kHz） · Output Current: More Than 200mA (300mA Limit) · Extremely Low Noise:

文件：1.19367 Mbytes 页数：29 Pages

DIODES

美台半导体

丝印：CH；Package：SOT1061D；45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

文件：1.40185 Mbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CH；Package：DFN2020D-3；60 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits • High collector current capa

文件：262.95 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：CH；Package：SOT-89；PNP Silicon AF Transistors

• For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX68 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：45.5 Kbytes 页数：4 Pages

Infineon

英飞凌

丝印：CH；Package：SOT89；PNP Silicon AF Transistors

• For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX68 (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101

文件：533.37 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：CH；Package：SOT89；20V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features  BVCEO = -20V  IC = -1A High Continuous Current  ICM= -2A Peak Pulse Current  Low Saturation Voltage VCE(sat)

文件：627.98 Kbytes 页数：4 Pages

DIODES

美台半导体