100 W, DC - 4.0 GHz, 50 V, GaN HEMT

文件：1.08824 Mbytes 页数：11 Pages

CREE

科锐

100 W, DC - 4.0 GHz, 50 V, GaN HEMT

文件：1.08824 Mbytes 页数：11 Pages

CREE

科锐

100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

Up to 3 GHz Operation100 W Typical Output Power17.5 dB Small Signal Gain at 2.0 GHzApplication Circuit for 0.5 – 2.5 GHz55% Efficiency at PSAT50 V Operation • Up to 3 GHz Operation\n• 100 W Typical Output Power\n• 17.5 dB Small Signal Gain at 2.0 GHz\n• Application Circuit for 0.5 – 2.5 GHz\n• 55% Efficiency at PSAT\n• 50 V Operation;

MACOM

Package：440193；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 50V 440193

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100-W; DC CGHV40100 3-GHz; 50-V; GaN HEMT

Up to 3 GHz Operation100 W Typical Output Power17.5 dB Small Signal Gain at 2.0 GHzApplication Circuit for 0.5 – 2.5 GHz55% Efficiency at PSAT50 V Operation • Up to 3 GHz Operation\n• 100 W Typical Output Power\n• 17.5 dB Small Signal Gain at 2.0 GHz\n• Application Circuit for 0.5 – 2.5 GHz\n• 55% Efficiency at PSAT\n• 50 V Operation;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGHV40100F DEV BOARD WITH HEMT

WOLFSPEED

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：TEST FIXTURE FOR CGHV40100F

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