30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes 页数：11 Pages

CREE

科锐

30 W, DC - 6 GHz, 50V, GaN HEMT

文件：1.16525 Mbytes 页数：11 Pages

CREE

科锐

30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation • Up to 6 GHz Operation\n•30 W Typical Output Power\n•16 dB Gain\n•Application circuit for 0.96 – 1.4 GHz\n•70% Efficiency at PSAT\n•50 V Operation;

MACOM

Package：440166；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 50V 440166

WOLFSPEED

30-W; DC – 6-GHz; 50-V; GaN HEMT

Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 – 1.4 GHz 70% Efficiency at PSAT 50 V Operation • Up to 6 GHz Operation\n•16 dB Gain\n•70% Efficiency at PSAT\n•50 V Operation;

MACOM

包装：散装 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGHV40030F DEVELOPMENT BOARD

WOLFSPEED