250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.07368 Mbytes 页数：11 Pages

Cree

科锐

250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems

文件：1.07368 Mbytes 页数：11 Pages

Cree

科锐

250-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

FET Tuning range UHF through 1800 MHz 330 W Typical Output Power 18 dB Power Gain 77 % Typical Drain Efficiency < 0.3 dB Pulsed Amplitude Droop Internally pre-matched on input; unmatched output • FET Tuning range UHF through 1800 MHz\n•330 W Typical Output Power\n•18 dB Power Gain\n•77 % Typical Drain Efficiency\n•< 0.3 dB Pulsed Amplitude Droop\n•Internally pre-matched on input; unmatched output;

MACOM

Package：440161；包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：250W, GAN HEMT, 50V, 0.5-1.8GHZ,

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