CGH60060D

60 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’sCGH60060Disagalliumnitride(GaN)HighElectronMobility Transistor(HEMT).GaNhassuperiorpropertiescomparedtosiliconorgallium arsenide,includinghigherbreakdownvoltage,highersaturatedelectrondrift velocity,andhigherthermalconductivity.GaNHEMTso

CGH60060D

60 W, 6.0 GHz, GaN HEMT Die

CGH60060D-GP4

60 W; 6.0 GHz; GaN HEMT Die; ·60 W Typical PSAT\n·28 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency\n;

Note: CGH60060D is Not Recommended for New Designs. Refer to CG2H80060D. The CGH60060D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocity; and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.\n

CPT60060

SCHOTTKYPOWERMOD

CPT60060

SchottkyPowerMod

CVRI-RH-60060

ClassH(K),JandRmodularferrulefuseblocks