15 W, 6.0 GHz, GaN HEMT Die

Description Wolfspeed’s CGH60015D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs

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15 W, 6.0 GHz, GaN HEMT Die

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Cree

科锐

15-W, 6.0-GHz, GaN HEMT Die

Wolfspeed’s CGH60015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power

MACOM

15 W; 6.0 GHz; GaN HEMT Die

Note: CGH60015D is Not Recommended for New Designs. Refer to CG2H80015D. The CGH60015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide; including higher breakdown voltage; higher saturated electron drift velocit ·15 W Typical PSAT\n·28 V Operation\n·High Breakdown Voltage\n·High Temperature Operation\n·Up to 6 GHz Operation\n·High Efficiency;

MACOM

Package：模具；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V DIE

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