10-W RF Power GaN HEMT

Up to 6 GHz Operation16 dB Small Signal Gain at 2.0 GHz14 dB Small Signal Gain at 4.0 GHz13 W typical PSAT65 % Efficiency at PSAT28 V Operation • Up to 6 GHz Operation\n• 16 dB Small Signal Gain at 2.0 GHz\n• 14 dB Small Signal Gain at 4.0 GHz\n• 13 W typical PSAT\n• 65 % Efficiency at PSAT\n• 28 V Operation;

MACOM

10 W, RF Power GaN HEMT

文件：1.48055 Mbytes 页数：15 Pages

Cree

科锐

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CGH40010F DEV BOARD WITH HEMT

WOLFSPEED

10 W, RF Power GaN HEMT

文件：1.48055 Mbytes 页数：15 Pages

Cree

科锐

10 W, RF Power GaN HEMT

文件：1.48055 Mbytes 页数：15 Pages

Cree

科锐

Single Phase Bridge Rectifiers

Features: • Metal case for maximum heat dissipation • Surge overload ratings to 400 amperes

文件：182.85 Kbytes 页数：3 Pages

MULTICOMP

易络盟