240-W, 2700 – 3100-MHz, 50-ohm Input/Output Matched GaN HEMT for S-Band Radar Systems

Wolfspeed’s CGH31240F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH31240F ideal for 2.7 –3.1-GHz, S-band, radar-amplifier applications. The transistor is supplied in a cer

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240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Description Wolfspeed’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is s

文件：2.69649 Mbytes 页数：12 Pages

WOLFSPEED

240 W, 2700-3100 MHz, 50-ohm Input

文件：2.16374 Mbytes 页数：12 Pages

CREE

科锐

240 W, 2700-3100 MHz, 50-ohm Input

文件：2.16374 Mbytes 页数：12 Pages

CREE

科锐

240 W, 2700-3100 MHz, 50-ohm Input

文件：2.16374 Mbytes 页数：12 Pages

CREE

科锐

240 W; 2700 - 3100 MHz; 50 - ohm Input/Output Matched GaN HEMT for S - Band Radar Systems

The CGH31240F is a gallium-nitride (GaN)  high-electron-mobility transistor (HEMT) designed specifically with high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH31240F ideal for 2.7 –3.1-GHz; S-band; radar-amplifier applications. The transistor is supplied in a ceramic/me ·2.7 – 3.1 GHz Operation\n·12 dB Power Gain\n·60% Power Added Efficiency\n·<0.2 dB Pulsed Amplitude Droop;

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