30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

文件：1.1426 Mbytes 页数：12 Pages

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30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

文件：1.1426 Mbytes 页数：12 Pages

CREE

科锐

30-W, DC – 6.0-GHz, 28-V, GaN HEMT

The CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is availa • VHF – 3.0 GHz Operation\n• 30 W Peak Power Capability\n• > 15 dB Small Signal Gain\n• > 28% Drain Efficiency;

MACOM

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

文件：1.1426 Mbytes 页数：12 Pages

CREE

科锐

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

文件：1.1426 Mbytes 页数：12 Pages

CREE

科锐

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

文件：1.1426 Mbytes 页数：12 Pages

CREE

科锐