CGH27030F-AMP

30-W, DC – 6.0-GHz, 28-V, GaN HEMT; • VHF – 3.0 GHz Operation\n• 30 W Peak Power Capability\n• > 15 dB Small Signal Gain\n• > 28% Drain Efficiency\n;

The CGH27030 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency; high-gain and wide-bandwidth capabilities; which makes the CGH27030 ideal for VHF; Comms; 3G; 4G; LTE; 2.3-2.9GHz WiMAX and BWA amplifier applications. The transistor is available in screw-down flange; solder-down pill packages; and a 3mm x 4mm; surface mount; dual-flat-no-lead (DFN) package.                                                                         Note: CGH27030F/P are Not Recommended for New Designs. Refer to CG2H40025F. \n\n

CGH27030F-AMP

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

CGH27030F-AMP

30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

CGH27030F-TB

30W,28V,GaNHEMTforLinearCommunicationsrangingfromVHFto3GHz

CGH27030F-TB

30W,28V,GaNHEMTforLinearCommunicationsrangingfromVHFto3GHz

CGH27030P

30W,28V,GaNHEMTforLinearCommunicationsrangingfromVHFto3GHz