15 W, 28 V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

The CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G,  4G, LTE,   2.3 – 2.9-GHz  WiMAX and BWA amplifier applications. The unmatched transistor ·VHF – 3.0 GHz Operation\n·15 W Peak Power Capability\n·14.5 dB Small Signal Gain\n·2 W PAVE < 2.0% EVM\n·28% Efficiency at 2 W Average Power;

MACOM

15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

文件：1.5799 Mbytes 页数：12 Pages

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Package：440196；包装：散装 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：15W, GAN HEMT, 28V, DC-6.0GHZ, P

WOLFSPEED

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

Description Wolfspeed’s CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV

文件：1.69027 Mbytes 页数：12 Pages

WOLFSPEED

15 W, DC - 6.0 GHz, 50 V, GaN HEMT

文件：1.41631 Mbytes 页数：12 Pages

Cree

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15 W, DC - 6.0 GHz, 50 V, GaN HEMT

文件：1.41631 Mbytes 页数：12 Pages

Cree

科锐