MULTILAYER CERAMIC CHIP CAPACITORS

■FEATURES • Superior mechanical strength and high reliability due to the monolithic structure • Outstanding frequency characteristics such as low ESR and low ESL by the simple structure • Low self-heating value and high resistance to ripple on account of the low ESR • No polarity • AEC-Q20

文件：878.7 Kbytes 页数：23 Pages

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东电化

MULTILAYER CERAMIC CHIP CAPACITORS

FEATURES • High resistance to mechanical stress and thermal shock by resin layers • X8R and X8L type whose maximum temperature are up to 150°C are available • C0G type having excellent stable temperature and DC-bias characteristics is also available APPLICATIONS • Fail-safe design for batte

文件：639.37 Kbytes 页数：19 Pages

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东电化

MULTILAYER CERAMIC CHIP CAPACITORS Automotive grade, mid voltage (100 to 630V)

■FEATURES ◯Voltage rating: 100V, 250V, 450V, 630V ◯Operating temperature range: -55～+125°C ◯C0G temperature characteristic which has excellent stable temperature and DC-bias characteristcs is applicable. ◯Qualified based on AEC-Q200。 ■APPLICATION ◯Wireless Charging units, DC-DC converter,

文件：859.98 Kbytes 页数：18 Pages

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东电化

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage

文件：297.05 Kbytes 页数：10 Pages

RFMD

威讯联合

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage

文件：297.05 Kbytes 页数：10 Pages

RFMD

威讯联合

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage

文件：297.05 Kbytes 页数：10 Pages

RFMD

威讯联合

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage

文件：297.05 Kbytes 页数：10 Pages

RFMD

威讯联合

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage

文件：297.05 Kbytes 页数：10 Pages

RFMD

威讯联合

DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER

Product Description RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The hetero-junction increases breakdown voltage

文件：297.05 Kbytes 页数：10 Pages

RFMD

威讯联合

MULTILAYER CERAMIC CHIP CAPACITORS Automotive grade, mid voltage (100 to 630V)

■FEATURES ◯Voltage rating: 100V, 250V, 450V, 630V ◯Operating temperature range: -55～+125°C ◯C0G temperature characteristic which has excellent stable temperature and DC-bias characteristcs is applicable. ◯Qualified based on AEC-Q200。 ■APPLICATION ◯Wireless Charging units, DC-DC converter,

文件：859.98 Kbytes 页数：18 Pages

TDK

东电化