CG2H40035中文资料35 W RF Power GaN HEMT数据手册MACOM规格书
CG2H40035规格书详情
描述 Description
The CG2H40035 is an unmatched; gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40035; operating from a 28 volt rail; offers a general purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capabilities making the CG2H40035 ideal for linear and compressed amplifier circuits. The transistor is available in both a screw-down; flange package and solder-down; pill packages.
特性 Features
·40 W typical PSAT
·64% Efficiency at PSAT
·14 dB Small Signal Gain at 3.5 GHz
·28 V Operation
应用 Application
·Test Instrumentation
·Cellular Infrastructure
·Broadband Amplifiers
·2-Way Private Radio
·Class A, AB
·Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms
技术参数
- 制造商编号
：CG2H40035
- 生产厂家
：MACOM
- Min Frequency(MHz)
：0
- Max Frequency(MHz)
：6000
- Peak Output Power(W)
：35
- Gain(dB)
：14.0
- Efficiency(%)
：64
- Operating Voltage(V)
：28
- Form
：Packaged Discrete Transistor
- Package Category
：Flange
- Technology
：GaN-on-SiC
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
BGA-420 |
3 |
询价 | ||||
Wolfspeed |
25+ |
Tube |
4430 |
郑重承诺只做原装进口现货 |
询价 | ||
Cree/Wolfspeed |
2022+ |
440193 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
CREE(科锐) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
LINEAR |
23+ |
null |
10067 |
专注配单,只做原装进口现货 |
询价 | ||
M/A-COM |
24+ |
SMD |
12800 |
M/A-COM专营品牌绝对进口原装假一赔十 |
询价 | ||
WOLFSPEED/CREE |
23+ |
440193 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
24+ |
N/A |
73000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
MITSUBIS |
23+ |
3880 |
正品原装货价格低 |
询价 | |||
Cree |
22+ |
NA |
2 |
加我QQ或微信咨询更多详细信息, |
询价 |
