25 W, 28 V RF Power GaN HEMT

Description Wolfspeed’s CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

文件：3.28418 Mbytes 页数：14 Pages

WOLFSPEED

25 W, 28 V RF Power GaN HEMT

文件：1.96973 Mbytes 页数：14 Pages

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25 W RF Power GaN HEMT

The CG2H40025 is an unmatched; gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40025; operating from a 28-volt rail; offers a general-purpose; broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency; high gain and wide bandwidth capab ·17 dB Small Signal Gain at 2.0 GHz\n·15 dB Small Signal Gain at 4.0 GHz\n·30 W typical PSAT\n·70% Efficiency at PSAT\n·28 V Operation;

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25 W, 28 V RF Power GaN HEMT

文件：1.96973 Mbytes 页数：14 Pages

Cree

科锐

25 W, 28 V RF Power GaN HEMT

文件：1.96973 Mbytes 页数：14 Pages

Cree

科锐

25-W RF Power GaN HEMT

Up to 6 GHz Operation17 dB Small Signal Gain at 2.0 GHz15 dB Small Signal Gain at 4.0 GHz30 W typical PSAT70% Efficiency at PSAT28 V Operation • Up to 6 GHz Operation\n• 17 dB Small Signal Gain at 2.0 GHz\n• 15 dB Small Signal Gain at 4.0 GHz\n• 30 W typical PSAT\n• 70% Efficiency at PSAT\n• 28 V Operation;

MACOM

25-W RF Power GaN HEMT

Up to 6 GHz Operation17 dB Small Signal Gain at 2.0 GHz15 dB Small Signal Gain at 4.0 GHz30 W typical PSAT70% Efficiency at PSAT28 V Operation • Up to 6 GHz Operation\n• 17 dB Small Signal Gain at 2.0 GHz\n• 15 dB Small Signal Gain at 4.0 GHz\n• 30 W typical PSAT\n• 70% Efficiency at PSAT\n• 28 V Operation;

MACOM

Package：440166；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF MOSFET HEMT 28V 440166

WOLFSPEED

包装：盒 类别：开发板，套件，编程器 射频评估和开发套件，开发板 描述：CG2H40025F DEV BOARD WITH HEMT

WOLFSPEED