70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT

Description Cree’s CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, hi

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70 W, 0.5??.0 GHz, 28 V, RF Power GaN HEMT

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70-W; 0.5-3.0 GHz; GaN HEMT

0.5 – 3.0 GHz Application Circuit85 W POUT typical at 28 V10 dB Power Gain58% Drain EfficiencyInternally Matched • 0.5 – 3.0 GHz Application Circuit\n• 85 W POUT typical at 28 V\n• 10 dB Power Gain\n• 58% Drain Efficiency\n• Internally Matched;

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70-W; 0.5-3.0 GHz; GaN HEMT

0.5 – 3.0 GHz Application Circuit85 W POUT typical at 28 V10 dB Power Gain58% Drain EfficiencyInternally Matched • 0.5 – 3.0 GHz Application Circuit\n• 85 W POUT typical at 28 V\n• 10 dB Power Gain\n• 58% Drain Efficiency\n• Internally Matched;

MACOM