双路N沟道MOS管

Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Fully Characterized Avalanche Voltage and Current.

CHIPFLY

芯飞卓

Dual N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 6 Ampere FEATURE * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. * Small flat package. (SO-8 ) APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：421.83 Kbytes 页数：3 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 20 Volts CURRENT 26 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：202.96 Kbytes 页数：2 Pages

CHENMKO

力勤

Dual N-Channel MOSFET

文件：2.5967 Mbytes 页数：5 Pages

JIANGSU

长电科技