NTD5802NS

N-Channel40V(D-S)MOSFET

NTE5802

NTE5800thruNTE5809AxialLeadStandardRecoverySiliconRectifiers,3Amp,DO27

Description: TheNTE5800throughNTE5809siliconrectifiersaredesignedforuseinpowersuppliesandotherapplicationshavingneedofadevicewiththefollowingfeatures: ●HighCurrenttoSmallSize ●HighSurgeCurrentCapability ●LowForwardVoltageDrop

NVD5802N

PowerMOSFET40V,SingleN?묬hannel,101ADPAK

NVD5802N

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=101A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.4mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PT5802

18-A5-VInputAdjustableIntegratedSwitchingRegulator

PT5802

18AOutputCurrent

SIDR5802EP

N-Channel80V(D-S)175°CMOSFET

FEATURES •TrenchFET®GenVpowerMOSFET •VerylowRDS-Qgfigure-of-merit(FOM) •TunedforthelowestRDS-QossFOM •100RgandUIStested •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Synchronousrectification •Prima

SIR5802DP

N-Channel80V(D-S)MOSFET

FEATURES •TrenchFET®GenVpowerMOSFET •Ultra-lowRDSxQgFOMproduct •OptimizedQgd/Qgsratio •Excellentefficiencyperformancein powersupplies •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

SPD5802

HYPERFASTRECOVERYRECTIFIER

SPD5802

LOWLEAKAGE2.0AMPS50-150VOLTS25nsHYPERFASTRECOVERYRECTIFIER