N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 57A, RDS (ON) = 16 mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant.

文件：838.68 Kbytes 页数：6 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel 700V (D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：825.38 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 700V (D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：825.38 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

N-Channel 700V (D-S) Super Junction Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：825.38 Kbytes 页数：10 Pages

VBSEMI

微碧半导体