N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V, 18A, RDS(ON) = 0.27W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. RoHS compliant.

文件：391.57 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

SCHOTTKY BARRIER DIODE VOLTAGE 45 Volts CURRENT 0.1 Ampere

文件：71.79 Kbytes 页数：2 Pages

CHENMKO

力勤

SCHOTTKY BARRIER DIODE VOLTAGE 30 Volts CURRENT 0.1 Ampere

文件：90.76 Kbytes 页数：2 Pages

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ULTRA SMALL CHIP LEDS FOR USE IN VARIOUS ELECTRONIC PRODUCTS

文件：349.89 Kbytes 页数：8 Pages

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