N-Channel Enhancement Mode Field Effect Transistor With Fast Body Diode

FEATURES 700V@TJ max, 46A, RDS(ON) = 58mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-247 package. Fast reverse recovery time. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：590.53 Kbytes 页数：6 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：443.29 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Fast reverse recovery time. Pb-free lead plating ; RoHS compliant. Halogen Free.

文件：526.46 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：443.29 Kbytes 页数：5 Pages

CET-MOS

华瑞