N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V, 7.5A, RDS(ON) = 0.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：518.95 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 500V, 7A, RDS(ON) = 0.85W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：624.15 Kbytes 页数：4 Pages

CET-MOS

华瑞

LED array

文件：268.2 Kbytes 页数：3 Pages

LUMINIS

Mono-Color Side-Lighting Type

文件：394.13 Kbytes 页数：1 Pages

CITIZEN

西铁城电子株式会社