N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 30V, 40A, RDS(ON) = 19mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：380.53 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 40 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：210.65 Kbytes 页数：2 Pages

CHENMKO

力勤

HERMETICALLY SEALED TO-5 CASE

[CLAIREX]

文件：39.29 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HERMETICALLY SEALED TO-5 CASE

[CLAIREX]

文件：39.29 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商