Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES ■ 40V , 14A , RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 46mΩ @VGS = 4.5V. ■ -40V , -9A , RDS(ON) = 72mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capabil

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 40V , 14A , RDS(ON) = 32mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 46mW @VGS = 4.5V. Lead free product is acquired. -40V , -9A , RDS(ON) = 72mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.

文件：800.6 Kbytes 页数：7 Pages

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N+P Power MOSFET

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文件：473.08 Kbytes 页数：10 Pages

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文件：3.42057 Mbytes 页数：50 Pages

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