Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 20mW @VGS = 4.5V. -30V , -13A , RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. TO-252-4L package. RoHS compliant.

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CET-MOS

华瑞

Dual N & P MOSFET

CET

华瑞

짹15kV ESD Protected, 125째C, 40Mbps, 5V, PROFIBUS짰, Full Fail-safe, RS-485/RS-422 Transceivers

文件：672.19 Kbytes 页数：16 Pages

Intersil

World?셲 Most Power-Effi cient

文件：210.91 Kbytes 页数：4 Pages

Intersil

High ESD Protected, 125째C, 40Mbps, 3.3V, Full Fail-Safe RS-485/RS-422 Transceivers

High ESD Protected, +125°C, 40Mbps, 3.3V, Full Fail-Safe RS-485/RS-422 Transceivers The ISL3179E and ISL3180E are high ESD protected (see Table 2 on page 2), 3.3V powered, single transceivers that meet both the RS-485 and RS-422 standards for balanced communication. Each device has low bus curren

文件：1.2225 Mbytes 页数：18 Pages

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