N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 25A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：415.62 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 150V, 25A, RDS(ON) = 70mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 80mW @VGS = 5V. Lead free product is acquired.

文件：641.71 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced SGT technology

文件：1.57728 Mbytes 页数：5 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞