N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 36A, RDS(ON) = 16.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 24 mW @VGS = 4.5V.

文件：937.78 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

Integrated Circuit B/W TV Video Detector Amplifier, IF AGC Circuit

Description: The NTE1610 is an integrated circuit in a 9–Lead SIP type package designed for use as a B/W TV video detector amplifier and IF AGC circuit. Features: High Gain IF Signal to Video Signal Conversion (Detection) and Operates with Low Input Signal Level No Adjustment for IF

文件：19.08 Kbytes 页数：2 Pages

NTE

Zero-voltage-switching resonant converter controller

文件：110.8 Kbytes 页数：20 Pages

PHI

PHI

Zero-voltage-switching resonant converter controller

文件：110.8 Kbytes 页数：20 Pages

PHI

PHI