CEU13N65S

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJmax,12.3A,RDS(ON)=0.32W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant.

DTQ13N65GN

90mΩ,650VGaNHEMTWithIntegratedDriverandProtection

1.0Features •650VenhancementmodeHEMTwithintegrateddriver •90mΩRDSON •5VPWMinput •UVLOprotection •Zeroreverserecovery •Lowquiescentcurrentdriver •Adjustableturn-onslewrate •Dv/Dtimmunitybothwith/withoutdriver-supply •Lowpropagationdelayforupto2MHzoper

DTQ13N65GN-EVB

90mΩ,650VGaNHEMTWithIntegratedDriverandProtection

1.0Features •650VenhancementmodeHEMTwithintegrateddriver •90mΩRDSON •5VPWMinput •UVLOprotection •Zeroreverserecovery •Lowquiescentcurrentdriver •Adjustableturn-onslewrate •Dv/Dtimmunitybothwith/withoutdriver-supply •Lowpropagationdelayforupto2MHzoper

DTQ13N65GS

SUPERIORIORGaNDTQ13N65GS–90mΩ,650VGaNHEMT

1.0Features •650V,90mΩenhancementmodepowerHEMT •AdapttovariousPWMcontrollers •Zeroreverserecovery •Adjustableturn-onslewrate •Highswitchingfrequency(>2MHz) •Reverseconductioncapable •EnhancedthermalperformancewithNCcenterpad •Simpleandlowcostinterfacec

DTQ13N65GS-EVB

SUPERIORIORGaNDTQ13N65GS–90mΩ,650VGaNHEMT

1.0Features •650V,90mΩenhancementmodepowerHEMT •AdapttovariousPWMcontrollers •Zeroreverserecovery •Adjustableturn-onslewrate •Highswitchingfrequency(>2MHz) •Reverseconductioncapable •EnhancedthermalperformancewithNCcenterpad •Simpleandlowcostinterfacec

FQPF13N65C

N-ChannelMOSFET

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.65Ω(Max)@VGS=10V APPLICATIONS ·SolarInverters ·SwitchModePowerSupplies ·DC-DCConverters ·Motordrives

HFP13N65U

SuperiorAvalancheRuggedTechnology

HFS13N65U

SuperiorAvalancheRuggedTechnology

ICE13N65

N-ChannelEnhancementModeMOSFET

ICE13N65

N-ChannelEnhancementModeMOSFET