N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V@TJ max, 12.3A, RDS(ON) = 0.32W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：504.6 Kbytes 页数：5 Pages

CET-MOS

华瑞

N Channel MOSFET

CET

华瑞

90mΩ, 650V GaN HEMT With Integrated Driver and Protection

1.0 Features • 650V enhancement mode HEMT with integrated driver • 90mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz oper

文件：3.34352 Mbytes 页数：15 Pages

DINTEK

90mΩ, 650V GaN HEMT With Integrated Driver and Protection

1.0 Features • 650V enhancement mode HEMT with integrated driver • 90mΩ RDSON • 5V PWM input • UVLO protection • Zero reverse recovery • Low quiescent current driver • Adjustable turn-on slew rate • Dv/Dt immunity both with/without driver-supply • Low propagation delay for up to 2MHz oper

文件：3.34352 Mbytes 页数：15 Pages

DINTEK

SUPERIORIOR GaN DTQ13N65GS – 90mΩ, 650V GaN HEMT

1.0 Features • 650V, 90mΩenhancement mode power HEMT • Adapt to various PWM controllers • Zero reverse recovery • Adjustable turn-on slew rate • High switching frequency (>2MHz) • Reverse conduction capable • Enhanced thermal performance with NC center pad • Simple and low cost interface c

文件：2.65178 Mbytes 页数：17 Pages

DINTEK