N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 900V, 2A, RDS(ON) = 6.8Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：420.4 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 900V, 2A, RDS(ON) = 6.8W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：641.87 Kbytes 页数：4 Pages

CET-MOS

华瑞

N-Channel MOSFET uses advanced trench technology

文件：960.55 Kbytes 页数：5 Pages

DOINGTER

杜因特

N Channel MOSFET

CET

华瑞