丝印：CEU；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI1

德州仪器

丝印：CEU；Package：SC70；INA21x Voltage Output, Low- or High-Side Measurement, Bidirectional, Zero-Drift Series, Current-Shunt Monitors

1 Features • Updated format to match new TI layout and flow. Tables, figures and cross-references use a new numbering sequence throughout the document. Wide Common-Mode Range: –0.3 V to 26 V • Offset Voltage: ±35 μV (Maximum, INA210) (Enables Shunt Drops of 10-mV Full-Scale) • Accuracy: –

文件：1.58588 Mbytes 页数：45 Pages

TI1

德州仪器

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：85.28 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：400.59 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：398.58 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 650V, 0.9A, RDS(ON) = 15W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：472.38 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 1.1A, RDS(ON) = 12W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant.

文件：412.24 Kbytes 页数：5 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：414.42 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 700V, 0.8A, RDS(ON) = 18 Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.

文件：420.77 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 700V, 0.8A, RDS(ON) = 18 W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead free product is acquired.

文件：643.03 Kbytes 页数：4 Pages

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司