N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● 60V, 3.7A, RDS(ON)=100mΩ @ VGS=10V. RDS(ON)=120mΩ @ VGS=4.5V. ● High dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-223 Package.

文件：494.66 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

文件：372.16 Kbytes 页数：4 Pages

CET

华瑞

N Channel MOSFET

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 8A, RDS(ON) = 150mΩ @VGS = 10V. RDS(ON) = 180mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package.

文件：591.69 Kbytes 页数：5 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 30 Volts CURRENT 12 Ampere FEATURE * Small package. (TO-252A) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：210.31 Kbytes 页数：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 3.7 Ampere FEATURE * Small package. (SC-62/SOT-89 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications.

文件：363.98 Kbytes 页数：3 Pages

CHENMKO

力勤